Sign In | Join Free | My himfr.com
Home > High Power IGBT Driver >

High Power IGBT Driver, Dual IGBT Driver, PSHI 0622

    Buy cheap High Power IGBT Driver, Dual IGBT Driver, PSHI 0622 from wholesalers
     
    Buy cheap High Power IGBT Driver, Dual IGBT Driver, PSHI 0622 from wholesalers
    • Buy cheap High Power IGBT Driver, Dual IGBT Driver, PSHI 0622 from wholesalers

    High Power IGBT Driver, Dual IGBT Driver, PSHI 0622

    Ask Lasest Price
    Brand Name : power-sem
    Model Number : PSHI 0622
    • Product Details
    • Company Profile

    High Power IGBT Driver, Dual IGBT Driver, PSHI 0622

    ● ASIC dual IGBT driver
    ● Suitable for all IGBTs up to 1200V/1700V
    ● Half-bridge mode select,also two independent single drives
    ● Short circuit and over current protection by VCEsat monitoring
    ● Isolation due to nanometer amorphous transformer
    ● Supply undervoltage protection (<12.5V)
    ● Error memory
    ●Error "soft turn-off"
    ● Driver interlock top/bottom in half-bridge mode
    ● Dead time adjustable
    ● Internal isolated DC/DC power supply
    ● ±25A peak current output
    ● IGBT gate drive voltage+15V/-9V
    ● 650ns signal conversion time
    ● 110ns error signal feedback time
    ● 400ns narrow pulse inhibit eliminate radio frequency interference
    ● Max. working frequency 100kHz
    ● Error chain function, low level active
    ●Turn-off spike restrain by "dynamic soft turn-off"

    Absolute Maximum Ratings(Ta=25℃ )

    Symbol

    Term

    Values

    Unit

    VS MAX.

    Max. supply voltage primary

    +16

    V

    IS MAX.

    Max. supply current primary

    430

    mA

    PDC/DC

    Total power of DC/DC isolation power output

    6

    W

    Vin

    Max. PWM input level VinA; VinB

    VS+0.5

    V

    ViH

    Max. logic signal input voltage

    (Mode select;reset signal;external error)

    VS+0.5

    V

    IOC

    Max. logic signal output currect

    (Open-collector output current)

    10

    mA

    IoutAV

    Output average current per channel

    100

    mA

    IoutPEAK

    Output peak current per channel

    ±25

    A

    VCES

    IGBT collector-emitter voltage

    1700

    V

    Visol IO

    Isolation voltage IN-OUT(10 sec.AC)

    4000

    V

    Visol AB

    Isolation voltage OUT A-OUT B(10 sec.AC)

    3000

    V

    RGon/off min

    Minimal Rgon/Rgoff

    1

    Ω

    Qout/pulse

    Charge per pulse

    ±15

    μC

    dv/dt

    Rate of rise and fall of voltage

    75

    kV/μs

    fSWmax

    Max. working frequency

    100

    kHz

    Top

    Operating temperature

    -40...+85

    Tstg.

    Storage temperatature

    -45...+85


    Electrical Characteristics(Ta=25℃ )

    Symbol

    Term

    Parameter

    Unit

    Min.

    Typ.

    Max.

    Rec.

    VS

    Supply voltage primary

    14.5

    15

    15.5

    15

    V

    IS

    No-load currect primary

    fSW=0kHz

    fSW=20kHz

    fSW=100kHz


    -

    80

    100

    130



    mA

    VIT+

    Input high level:

    15V level

    5V level

    --

    12

    3.2




    V

    VIT-

    Input low level:

    15V level

    5V level



    --

    4.5

    1.9


    V

    Rin

    Input resistance


    33



    VG(on)

    Turn-on gate voltage


    +15



    V

    VG(off)

    Turn-off gate voltage


    -9



    V

    td(on)IO

    IN-OUT turn-on delay time


    650



    ns

    td(off)IO

    IN-OUT turn-off delay time


    600



    ns

    td(err)

    Error signal return delay time

    VCEerror happen-error signal output


    110



    ns

    tmd

    Narrow pulse restrained


    400



    ns

    VCEstat

    Reference voltage for VCEmonitoring

    VCE=1700V

    VCE=1200V

    2

    -

    -


    6.8

    -

    -

    -

    6.2

    5.3

    V

    VLevel

    Logic level (External error input; resetsignal; mode select)


    +8


    +15

    V

    tpReset

    Vininput both Low reset time


    10



    μs

    tTD

    Dead time adjusted from factory

    (half-bridge interlock mode)

    .05

    5



    μs

    CPS

    Primary to secondary capacitance


    12



    pf

    ① This value can be expanded externally (on adapter board) by pins.

    ② Attention!
    Pins XS.3,7 should not connect to power supply VSor GND
    directly
    ,Min.RTDis 1kΩ and corresponding tTDis about 0.05μs.


    ● Single or bridge circuit
    ● Inverter
    ● Welding machine
    ● Induction heating
    ● Converter
    ● High power UPS
    ● High power high frequency SMPS
























































    Product Tags:

    driver core

      

    IGBT driver

      

    driver

      
    Quality High Power IGBT Driver, Dual IGBT Driver, PSHI 0622 for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
    *Subject:
    *Message:
    Characters Remaining: (0/3000)